|
|
Patent Number: |
7906401 |
|
|
Case ID: |
0 |
|
|
Patent Title:
|
Method of tuning threshold voltages of interdiffusible structures
|
|
|
Status: |
ACTIVE |
|
|
Status Date: |
11/29/2011 10:02:06 AM |
|
|
Issue Date:
|
3/15/2011 |
|
|
Filed Date:
|
11/1/2006 |
|
|
Serial #:
|
1/602,444 |
|
|
Assignee Name:
|
The United States of America as represented by the Secretary of the Navy
(Washington,
DC)
|
|
|
Inventor(s):
|
Lu, Ryan P. , Ramirez, Ayax D. , Offord, Bruce W. , Russell, Stephen D. |
|
|
|
|
BACKGROUND
The patent application is generally in the field of methods of microfabrication and nanofabrication.
Typical fabrication methods of modifying threshold voltages of solid-state devices require global processes such as varying metals, oxide thicknesses and doping, which greatly increases process complexity.
A need exists for methods of modifying threshold voltages of solid-state devices allowing local processes.
BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1A-E are cross-sectional side views of some of the features of an exemplary device formed in accordance with one embodiment of a method of tuning threshold voltages of interdiffusible structures.
FIGS. 2A-2B are flowcharts of embodiments of a method of tuning threshold voltages of interdiffusible structures.
FIG. 3 is a graph representing exemplary results of a method of tuning threshold voltages of interdiffusible structures.
FIGS. 4A-4D are cross-sectional s . . . . More |
|
|
|
|
A method of tuning threshold voltages of interdiffusible structures. The
method includes a step of situating an interdiffusible structure in a
path of a laser and a step of illuminating the interdiffusible structure
with laser energy until a desired threshold voltage is obtained.
|
|
|
|
|
We claim:
1. A method of tuning threshold voltages of interdiffusible structures comprising the steps of: a) situating an interdiffusible structure formed in the gate of a field effect
transistor in a path of a laser; and b) illuminating said interdiffusible structure with laser energy until a desired threshold voltage is obtained.
2. The method of claim 1, wherein said interdiffusible structure comprises at least one metal layer, wherein material from said at least one metal layer is diffusible into an adjacent layer.
3. The method of claim 2, wherein said adjacent layer comprises a second metal layer.
4. The method of claim 2, wherein said adjacent layer comprises a semiconductor layer.
5. The method of claim 1, wherein said interdiffusible structure comprises at least two adjacent metal layers, wherein material from a second metal layer is diffusible into a first metal layer.
6. The method of claim 5, wherein said second me . . . . More |
|
|
|
|
Print This Page
