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Patent 7906401 Click For Printable Version of This Patent
Patent Information:  USPTO Site Listing

Patent Number: 7906401
Case ID: 0
Patent Title: Method of tuning threshold voltages of interdiffusible structures
Status: ACTIVE
Status Date: 11/29/2011 10:02:06 AM
Issue Date: 3/15/2011
Filed Date: 11/1/2006
Serial #: 1/602,444
Assignee Name: The United States of America as represented by the Secretary of the Navy (Washington, DC)
Inventor(s): Lu, Ryan P. , Ramirez, Ayax D. , Offord, Bruce W. , Russell, Stephen D.
Lab Information:  View Lab Profile

Lab Name: SPAWAR Systems Center, Pacific
Location: 53560 Hull Street
San Diego, CA 92152-5001
Contact: Contact Lab About This Patent
   
Description:
BACKGROUND

The patent application is generally in the field of methods of microfabrication and nanofabrication.

Typical fabrication methods of modifying threshold voltages of solid-state devices require global processes such as varying metals, oxide thicknesses and doping, which greatly increases process complexity.

A need exists for methods of modifying threshold voltages of solid-state devices allowing local processes.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-E are cross-sectional side views of some of the features of an exemplary device formed in accordance with one embodiment of a method of tuning threshold voltages of interdiffusible structures.

FIGS. 2A-2B are flowcharts of embodiments of a method of tuning threshold voltages of interdiffusible structures.

FIG. 3 is a graph representing exemplary results of a method of tuning threshold voltages of interdiffusible structures.

FIGS. 4A-4D are cross-sectional s . . . . More
Abstract:
A method of tuning threshold voltages of interdiffusible structures. The method includes a step of situating an interdiffusible structure in a path of a laser and a step of illuminating the interdiffusible structure with laser energy until a desired threshold voltage is obtained.
Claims:
We claim:

1. A method of tuning threshold voltages of interdiffusible structures comprising the steps of: a) situating an interdiffusible structure formed in the gate of a field effect transistor in a path of a laser; and b) illuminating said interdiffusible structure with laser energy until a desired threshold voltage is obtained.

2. The method of claim 1, wherein said interdiffusible structure comprises at least one metal layer, wherein material from said at least one metal layer is diffusible into an adjacent layer.

3. The method of claim 2, wherein said adjacent layer comprises a second metal layer.

4. The method of claim 2, wherein said adjacent layer comprises a semiconductor layer.

5. The method of claim 1, wherein said interdiffusible structure comprises at least two adjacent metal layers, wherein material from a second metal layer is diffusible into a first metal layer.

6. The method of claim 5, wherein said second me . . . . More