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Patent Number: |
7952109 |
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Case ID: |
0 |
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Patent Title:
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Light-emitting crystal structures
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Status: |
ACTIVE |
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Status Date: |
8/2/2011 2:50:05 PM |
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Issue Date:
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5/31/2011 |
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Filed Date:
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7/10/2006 |
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Serial #:
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1/456,428 |
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Assignee Name:
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Alcatel-Lucent USA Inc.
(Murray Hill,
NJ)
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Inventor(s):
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Ng, Hock Min |
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Lab Name: |
U.S. Army Armament Research, Development and Engineering Center |
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Location: |
RDAR-EIB
Picatinny Arsenal, NJ 07806-5000 |
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Contact: |
Contact Lab About This Patent |
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TECHNICAL FIELD OF THE INVENTION
The present invention relates to an apparatus having a light emitting diode comprising a structure having a Group III-nitride, and a method of making the apparatus.
BACKGROUND OF THE INVENTION
It is desirable to improve the efficiency of light-emitting crystal structures, such as light-emitting diodes (LEDs), because this would increase their scope of use in commercial applications. Efficiency can be improved in two ways: increase
the external efficiency or increase the internal efficiency.
An improvement in external efficiency is achieved by extracting more light out of the structure. As well known by those skilled in the art light-emitting crystal structures have a critical angle where light reflected beyond that angle gets
reflected internally and does not exit the structure. E.g., only about 5 percent of the light generated in conventional planar LED passes out of the LED, the rest being internally reflected. E . . . . More |
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An apparatus comprising a structure comprising a group III-nitride and a
junction between n-type and p-type group III-nitride therein, the
structure having a pyramidal shape or a wedge shape.
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What is claimed is:
1. An apparatus, comprising: a structure comprising an n-type group III-nitride layer and a p-type group III-nitride layer and a junction between the n-type and the p-type
group III-nitride layers therein, the structure having a plurality of pyramids of group III-nitride; and wherein a quantum well is located at the junction, and wherein a continuous surface of one of the n-type group III-nitride layer and the p-type
group III-nitride layer forms outer surfaces of at least two of the pyramids.
2. The apparatus of claim 1, wherein the structure is configured to emit light from the pyramids when a voltage is applied between the n-type and p-type group III-nitride layers.
3. The apparatus of claim 2, wherein the quantum well has a quantum well layer and barrier layers, the quantum well layer being interposed between the barrier layers, wherein the quantum well layer comprises one group III-nitride and the
barrier layers comprise another gr . . . . More |
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