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Patent 7952109 Click For Printable Version of This Patent
Patent Information:  USPTO Site Listing

Patent Number: 7952109
Case ID: 0
Patent Title: Light-emitting crystal structures
Status: ACTIVE
Status Date: 8/2/2011 2:50:05 PM
Issue Date: 5/31/2011
Filed Date: 7/10/2006
Serial #: 1/456,428
Assignee Name: Alcatel-Lucent USA Inc. (Murray Hill, NJ)
Inventor(s): Ng, Hock Min
Lab Information:  View Lab Profile

Lab Name: U.S. Army Armament Research, Development and Engineering Center
Location: RDAR-EIB
Picatinny Arsenal, NJ 07806-5000
Contact: Contact Lab About This Patent
   
Description:
TECHNICAL FIELD OF THE INVENTION

The present invention relates to an apparatus having a light emitting diode comprising a structure having a Group III-nitride, and a method of making the apparatus.

BACKGROUND OF THE INVENTION

It is desirable to improve the efficiency of light-emitting crystal structures, such as light-emitting diodes (LEDs), because this would increase their scope of use in commercial applications. Efficiency can be improved in two ways: increase the external efficiency or increase the internal efficiency.

An improvement in external efficiency is achieved by extracting more light out of the structure. As well known by those skilled in the art light-emitting crystal structures have a critical angle where light reflected beyond that angle gets reflected internally and does not exit the structure. E.g., only about 5 percent of the light generated in conventional planar LED passes out of the LED, the rest being internally reflected. E . . . . More
Abstract:
An apparatus comprising a structure comprising a group III-nitride and a junction between n-type and p-type group III-nitride therein, the structure having a pyramidal shape or a wedge shape.
Claims:
What is claimed is:

1. An apparatus, comprising: a structure comprising an n-type group III-nitride layer and a p-type group III-nitride layer and a junction between the n-type and the p-type group III-nitride layers therein, the structure having a plurality of pyramids of group III-nitride; and wherein a quantum well is located at the junction, and wherein a continuous surface of one of the n-type group III-nitride layer and the p-type group III-nitride layer forms outer surfaces of at least two of the pyramids.

2. The apparatus of claim 1, wherein the structure is configured to emit light from the pyramids when a voltage is applied between the n-type and p-type group III-nitride layers.

3. The apparatus of claim 2, wherein the quantum well has a quantum well layer and barrier layers, the quantum well layer being interposed between the barrier layers, wherein the quantum well layer comprises one group III-nitride and the barrier layers comprise another gr . . . . More