|
|
|
Media
Source:
AFRL Success Stories website |
| |
| About the Technology: |
 The quest for new and improved electronics and photonic devices drives the
continual pursuit of epitaxial technique advancements and a clearer understanding
of epitaxial growth’s underlying physics. Scientists use epitaxial techniques to
match the orientation of a deposited crystal with the orientation of the crystal that
comprises the underlying substrate material. When the crystal orientations of two
or more different materials (heteroepitaxial) are not properly aligned, defects (i.e.,
misalignment and dislocation of atoms) result. An accumulation of these defects is
known as the defect density. AFRL is exploring ways to reduce defect density and
thereby increase semiconductor efficiency. |
| |
| Applications: |
|
Military and Commercial Significance: |
| AFRL scientists worked with Gratings, Inc. (Albuquerque, New Mexico), to demonstrate the feasibility
of producing improved-quality semiconductor films to support a diverse range of advanced military
and commercial applications. They achieved capabilities in this research and development effort that
could lead to major improvements in semiconductor films used in optoelectronic integrated circuits;
near-infrared photodetectors; and low-cost, lightweight, high-efficiency solar cells with high mechanical
strength. |
|
AFRL and Gratings reduced the density of defects--misalignments and dislocations
in the atomic layering--by a factor of 10,000. They completed the effort under the Air Force Small Business Innovation Research (SBIR) project. Their research focused on the heteroepitaxial growth of gallium arsenide and germanium on silicon (Si) surfaces. This accomplishment could have tremendous impact on the performance of semiconductor devices for future warfighting systems and
commercial products.
AFRL and Gratings’ SBIR effort expands the potential for extremely high quality semiconductor films. The work also resulted in the development of innovative techniques for Si quantum wire fabrication and silicon-on-insulator configurations. Researchers earned a patent for the technology, which they developed under the
SBIR program over a 5-year period. |
| |
| Industry Contact: |
|
Government Contact: |
Gratings Inc.
2700 Broadbent Pkwy NE, Suite B
Albuquerque, NM 87107
Telephone: 505-345-9564
Country: USA
|
|
Air Force Research Laboratory
Wright-Patterson AFB, OH 45433-7226
Telephone: 937-255-0785
|
| |
Print This Page
Back to Listing